Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1995-05-26
1996-10-15
Limanek, Robert P.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257 56, 257 58, 257 62, 257 65, 257410, H01L 2978, H01L 2712, H01L 2936
Patent
active
055656919
ABSTRACT:
In a thin film semiconductor device having a substrate (1), an active layer (3, 6, 9), a gate insulation layer (4), and a gate electrode (5), the active layer is produced through the steps of producing an amorphous silicon layer on said substrate through a CVD process by using polysilane Si.sub.n H.sub.2(n+1), n is an integer, with added chlorine gas, and effecting solid phase growth on to said amorphous silicon layer. The addition of chlorine in producing the amorphous silicon layer makes it possible to produce the amorphous silicon layer at a lower temperature and at a rapid growth rate. A thin film semiconductor device thus produced has the advantages of high mobility and low threshold voltage.
REFERENCES:
patent: 4007294 (1977-02-01), Woods et al.
patent: 4027380 (1977-06-01), Deal et al.
patent: 4625224 (1986-11-01), Nakagawa et al.
Arai Michio
Kobori Isamu
Hardy David B.
Limanek Robert P.
Semiconductor Energy Laboratory Co,. Ltd.
TDK Corporation
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