Coating apparatus – Gas or vapor deposition – With treating means
Patent
1998-12-29
2000-11-21
Bueker, Richard
Coating apparatus
Gas or vapor deposition
With treating means
118723R, C23C 1650
Patent
active
061487643
ABSTRACT:
Introducing a silane reactant gas into a Jet Vapor Deposition microwave discharge source for deposition of silicon nitride films at increased rate. An array of regularly spaced micro-inlets in a JVD microwave discharge source delivers the silane reactant gas and act as non-interfering silane injectors to give a rate increase proportional to the number of micro-inlets while preserving deposited film quality.
REFERENCES:
patent: 5356672 (1994-10-01), Schmitt
patent: 5356673 (1994-10-01), Schmitt
Cui Guang-Ji
Halpern Bret
Tamagawa Takashi
Bueker Richard
Jet Process Corporation
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