Lateral bipolar transistor

Details Lateral bipolar transistor Lateral bipolar transistor

1982-08-04

1985-10-22

Edlow, Martin H.

357 55, H01L 2972, H01L 2906

Patent

active

045491968

ABSTRACT:
A lateral bipolar transistor is described incorporating at least two grooves extending from the upper surface and spaced apart by a predetermined amount from which impurities are introduced to form an emitter region extending from the sidewall of one groove and a collector region extending from the sidewall of an adjacent groove with the base being the substrate material between the two regions. A plurality of grooves may be utilized to form a plurality of transistors with the grooves staggered to facilitate access to the ends of the grooves functioning as emitters and those functioning as collectors. The large vertical junction area formed by the side walls relative to the horizontal junction area at the bottom of the grooves and the uniform base width result in a high current gain lateral transistor.

REFERENCES:
patent: 3197710 (1965-07-01), Lin
patent: 4135950 (1979-01-01), Rittner
patent: 4314269 (1982-02-01), Fujiki
patent: 4451843 (1984-05-01), Dahlberg
"On Etching Very Narrow Grooves in Silicon", Applied Physics Letters, vol. 26, No. 4, Feb. 1975, by Don L. Kendall.
H. Berger, "Method of Producing a Lateral Transistor", IBM Tech. Disc. Bull., vol. 23, pp. 1089-1090 (Aug. 1980).

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