Method of forming silicon dioxide glass films

Fishing – trapping – and vermin destroying

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

437240, 437235, 148DIG118, 4272553, 4272552, 4272551, 423336, 423337, H01L 21285

Patent

active

050285661

ABSTRACT:
The manufacture of semiconductor devices and, specifically, deposition of SiO.sub.2 films on semiconductor devices by oxidative decomposition of oligo siloxanes at low temperature is disclosed.

REFERENCES:
patent: 2399687 (1946-05-01), McNabb
patent: 3109747 (1963-11-01), Foote
patent: 4168330 (1979-09-01), Kaganowicz
patent: 4173661 (1979-11-01), Bourdon
patent: 4571366 (1986-02-01), Thomas et al.
patent: 4605450 (1986-08-01), Thomas et al.
patent: 4619719 (1986-10-01), Thomas et al.
patent: 4877651 (1989-10-01), Dory
patent: 4894352 (1990-01-01), Lane et al.
patent: 4916091 (1990-04-01), Freeman et al.
Kern et al., "Low Pressure Chemical Vapor Deposition for Very Large-Scale Integration Processing--A Review", IEEE Trans. on Electron Devices, vol. ED-26, No. 4, Apr. 1979, pp. 647-657.
Adams, "Dielectric and Polysilicon Film Deposition", in VLSI Technology, edited by S. M. Sze, McGraw-Hill, 1983.
Wolf et al., Silicon Processing for the VLSI Era, vol. 1-Process Technology, Lattice Press, 1986.
J. C. Schumacher Company, Product Data Sheet No. 6, "Tetraethyl Orthosilicate (TEOS)".
J. C. Schumacher Company, Product Application Note No. 15, "TEOS and Liquid Dopant Sources for CVD SiO.sub.2, PSG, BPSG."
J. C. Schumacher Company, Technical Article, "The Deposition of Silicon Dioxide Films at Reduced Pressure".
J. C. Schumacher Company, Product Application Note No. 8, "Tetraethyl Orthosilicate for Semiconductor High Temp. Silicon Dioxide Depositions".
Ghandhi, VLSI Fabrication Principles, John Wiley and Sons, 1983.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of forming silicon dioxide glass films does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming silicon dioxide glass films, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming silicon dioxide glass films will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1247058

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.