1983-04-14
1985-10-22
Edlow, Martin H.
357 4, 357 16, 357 20, 357 56, H01L 2714, H01L 29161
Patent
active
045491950
ABSTRACT:
A semiconductor device is described for sensing radiant energy incorporating a pn junction formed by two layers of materials each having a different energy band gap to form a heterojunction diode and wherein the layer having the greatest energy band gap fully covers the boundaries or perimeter of the layer having a lesser energy band gap to reduce surface leakage current. Further, a semiconductor device is described for sensing radiant energy incorporating a pn junction formed by two layers of materials each having a different energy band gap to form a heterojunction diode wherein the layer having the greatest energy band gap has spaced-apart P regions to form the anode of the heterojunction diode whereby the heterojunction diode is buried below the surface of the layer having the greatest energy band gap. The invention reduces the problem of surface and bulk leakage across heterojunction diodes.
REFERENCES:
patent: 4137544 (1979-01-01), Koehler
patent: 4260428 (1981-04-01), Roy
Verie et al., Appl. Phys. Lett., vol. 10, No. 9, May 1, 1967, pp. 241 et seq.
Edlow Martin H.
Sutcliff W. G.
Westinghouse Electric Corp.
LandOfFree
Heterojunction semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Heterojunction semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Heterojunction semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-124693