Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Patent
1996-11-21
1999-01-19
Tsai, Jey
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
438502, H01L 21208
Patent
active
058613218
ABSTRACT:
A method is provided for producing an n-type or p-type epitaxial layer using a doped substrate material. The method includes growing a substrate (12), preferably from a material to which an epitaxial layer can be lattice-matched. The substrate (12) is doped with a predetermined concentration of dopant (14). Preferably, the dopant (14) possesses the ability to rapidly diffuse through a material. An epitaxial layer (16) is grown upon the doped substrate (12). The epitaxial layer (16) and the doped substrate are annealed, thereby causing the dopant (14) to diffuse from the substrate (14) into the epitaxial layer (16).
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Dodge John A.
Parker Sidney G.
Tregilgas John H.
Weirauch Donald F.
Bassuk Lawrence J.
Donaldson Richard L.
Maginniss Christopher L.
Mulpuri S.
Texas Instruments Incorporated
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