Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1998-08-10
2000-08-29
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117 96, 117101, 117913, 117923, 117935, C30B 2304, C30B 2504
Patent
active
061102784
ABSTRACT:
A template for seeding growth of a desired single-crystal material (e.g., Si, GaAs) is created by passing through a monocrystalline channelizing mask, in a channelizing direction thereof, at least one of a nucleation-friendly species (e.g., Si, Ga) and a knock-off species (e.g., Ar, F) for respective implant of a nucleation-friendly species within or removal of a nucleation-unfriendly material (e.g., SiO.sub.2) of a supplied substrate. The desired single-crystal material is then grown in epitaxial-like manner from the thus-formed seeding-template. In one embodiment, silicon ions are projected through a monocrystalline silicon mask of a selected crystal orientation ((100), or (111)) in its channelizing direction so as to implant the silicon ions in a silicon dioxide layer of a supplied substrate according to the selected crystal orientation of the channelizing mask. Monocrystalline silicon is then epitaxially grown on top of the silicon dioxide layer with the same crystal orientation. Three-dimensional integrated circuits (3D ULSIC's or UPIC's) may then be formed with this technique. The technique may be extended to many other fields of application that can benefit from economic formation of single-crystal materials, such as optics, opto-electronics, tribology, metallurgy, and so forth.
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Gimlan Gideon
Kunemund Robert
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