Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1995-08-02
2000-08-29
Tran, Minh-Loan
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257347, 257659, 349 43, 349 44, H01L 2904, H01L 2701
Patent
active
RE0368369
ABSTRACT:
The invention provides a semi-conductor light valve device and a process for fabricating the same. The device comprises a composite substrate having a supporte substrate, a light-shielding thin film formed on said supporte substrate and semiconductive thin film disposed on the light-shielding thin film with interposing an insulating thin film. A switching element made of a transistor and a transparent electrode for driving light valve are formed on the semiconductive thin film, and the switching element and the transparent electrode are connected electrically with each other. The transistor includes a channel region in the semiconductive thin film and a main gate electrode for controlling the conduction in the channel region, and the light-shielding thin film layer is so formed as to cover the channel region on the side opposite to said channel region, so as to prevent effectively a back channel and shut off the incident light.
REFERENCES:
patent: 4609930 (1986-09-01), Yamazaki
patent: 4759610 (1988-07-01), Yanagisawa
patent: 4821092 (1989-04-01), Noguchi
patent: 4984033 (1991-01-01), Ishizu et al.
Hayashi Yutaka
Kamiya Masaaki
Kojima Yoshikazu
Takasu Hiroaki
Agency of Industrial Science and Technology
Seiko Instruments Inc.
Tran Minh-Loan
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