Driver circuits for gate turn-off thyristors and bipolar transis

Details Driver circuits for gate turn-off thyristors and bipolar transis Driver circuits for gate turn-off thyristors and bipolar transis

1983-12-27

1986-06-03

Zazworsky, John

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307268, 307253, H03K 1772

Patent

active

045932042

ABSTRACT:
A driver circuit uses magnetic isolation through separate turn-on and turn-off transformers. During turn-on and turn-off a high initial current pulse is followed by steady dc gate bias. All control functions are performed on the low voltage common side of the transformers which are part of a dual mode power converter. The driver circuits are protected against failure of the gate-cathode terminals in the short circuited or open circuited mode.

REFERENCES:
patent: 4203047 (1980-05-01), Seki
patent: 4293779 (1981-10-01), Nestler et al.
patent: 4297594 (1981-10-01), Onda et al.
patent: 4298809 (1981-11-01), Onda et al.
patent: 4488059 (1984-12-01), Akamatsu
Gating Circuit Developed for High Power Thyristors, IEEE, Power Electronics Specialist Conference Record, 1981, pp. 215-225.
Application Engineering of Gate Turn-Off Thyristors, Hitachi Review, vol. 31 (1982), No. 4, pp. 173-178.

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