Semiconductor integrated circuit which allows adjustment of circ

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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307468, 307469, 307450, 307263, 307601, H03K 19094, H03K 19017, H03K 512, H03K 1920

Patent

active

045932034

ABSTRACT:
The invention provides a semiconductor integrated circuit, characteristics of which can be adjusted in accordance with storage data in a nonvolatile memory element. The semiconductor integrated circuit has a main semiconductor circuit having MOS transistors, and an adjusting circuit connected to the main semiconductor circuit so as to change the circuit characteristics of the main semiconductor circuit as needed. The adjusting circuit has MOS transistors and a plurality of fuse elements. The adjusting circuit causes a given fuse element to selectively disconnect in accordance with an input signal and generates at least one adjusting signal to adjust the circuit characteristics of the main semiconductor circuit.

REFERENCES:
patent: 4084105 (1978-04-01), Teranishi
patent: 4417154 (1983-11-01), Kuo
patent: 4424456 (1984-01-01), Shiraki et al.
patent: 4446534 (1984-05-01), Smith
patent: 4464587 (1984-08-01), Suzuki et al.
patent: 4476546 (1984-10-01), Varshney
patent: 4481432 (1984-11-01), Davies, Jr.
patent: 4499387 (1985-02-01), Konishi
ISSCC Digest of Technical Papers; pp. 80-81, "Redundancy Techniques for Fast Static RAMS," Kokkonen et al., Feb. 18, 1981.

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