Photoconductive member having amorphous silicon layers

Details Photoconductive member having amorphous silicon layers Photoconductive member having amorphous silicon layers

1984-03-30

1986-06-03

Goodrow, John L.

Radiation imagery chemistry: process, composition, or product th

Electric or magnetic imagery, e.g., xerography,...

Radiation-sensitive composition or product

430 95, G03G 5082

Patent

active

045929858

ABSTRACT:
A photoconductive member, is provided which has a support, a first layer having photoconductivity containing an amorphous material comprising silicon atoms as a matrix provided on said support and a second layer containing silicon atoms and carbon atoms as essential components provided on said first layer, wherein said first layer contains at least one kind of atoms selected from the group III of the periodic table together with nitrogen atoms, with the nitrogen atoms having a substantially uniform concentration distribution within said first layer and the group III atoms of the periodic table having a depth concentration profile of said atoms with respect to the layer thickness direction having the maximum concentration at the end surface on the side of said support or in the vicinity thereof and having the concentration of said atoms tending to decrease continuously toward the second layer.

REFERENCES:
patent: 4418132 (1983-11-01), Yamazaki
patent: 4465750 (1984-08-01), Ogawa et al.

Affiliated with

Also associated with

Rating

Photoconductive member having amorphous silicon layers does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Photoconductive member having amorphous silicon layers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Photoconductive member having amorphous silicon layers will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1232603