Photoconductive member of layer of A-Ge, A-Si increasing (O) and

Details Photoconductive member of layer of A-Ge, A-Si increasing (O) and Photoconductive member of layer of A-Ge, A-Si increasing (O) and

1984-10-29

1986-06-03

Goodrow, John L.

Radiation imagery chemistry: process, composition, or product th

Electric or magnetic imagery, e.g., xerography,...

Radiation-sensitive composition or product

430 84, 430 95, G03G 5082

Patent

active

045929823

ABSTRACT:
A photoconductive member is provided which has a substrate for photoconductive member, and a light-receiving layer comprising (1) a first layer with a layer constitution in which a first layer region (G) comprising an amorphous material containing germanium atoms and a second layer region (S) exhibiting photoconductivity comprising an amorphous material containing silicon atoms are successively provided on said substrate from the aforesaid substrate side, and (2) a second layer comprising an amorphous material containing silicon atoms and at least one of carbon atoms and nitrogen atoms, said first layer having a layer region (O) containing oxygen atoms, wherein the depth profile of oxygen atoms in the layer thickness direction in said layer region (O) is increased smoothly and continuously toward the upper end surface of the first layer.

REFERENCES:
patent: 4490450 (1984-12-01), Shimizu et al.
patent: 4491626 (1985-01-01), Kawamura et al.
patent: 4495262 (1985-01-01), Matsuzaki et al.

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