Method of manufacturing a reaction vessel for crystal growth pur

Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board

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427237, 4272553, B05D 302, B05D 722, C23C 1600

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045929246

ABSTRACT:
In order to prevent impurities, in particular a chlorine impurity, present in the wall of the vessel from diffusing into the interior of the vessel and there disturb the growth process of the crystal, a hollow member, in particular a tube (1), of quartz is provided on its inside with a coating of silicon dioxide, while argon, gaseous silane and a gaseous oxidant, for example, dinitrogen oxide and/or carbon dioxide are introduced into the hollow member heated at 250.degree. to 350.degree. C. and are converted by means of a microwave resonator (2) into a porous coating of silicon dioxide at a pressure between 20 and 30 mbar, which coating is sintered to form a coating which is preferably at least 50 .mu.m thick.

REFERENCES:
patent: 4196232 (1980-04-01), Schnable et al.
patent: 4262035 (1981-04-01), Jaeger et al.
patent: 4436762 (1984-03-01), Lapatovich et al.
patent: 4504518 (1985-03-01), Ovshinsky et al.

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