Coherent light generators – Particular active media – Semiconductor
Patent
1997-12-16
1999-11-23
Ngo, Hung N.
Coherent light generators
Particular active media
Semiconductor
372 46, H01S 319
Patent
active
059913215
ABSTRACT:
A separate confinement heterostructure laser device has an optical guiding region, an active region in the optical guiding region, and p-type and n-type cladding regions on opposite sides of the optical guiding region. At least one barrier layer is present within the p-type cladding region. The composition of the barrier layer is such that it has an X-minimum higher than that of adjacent parts of the p-type cladding region. The composition and/or thickness of the barrier layer is also such that it has a .GAMMA.-minimum which is higher than the X-minima of the adjacent parts of the p-type, cladding region. The thickness of the barrier layer is such as to prevent electron tunneling between the X-bands of the adjacent parts of the p-type cladding region on opposite sides of the barrier layer, and/or the compositions of the adjacent parts of the p-type cladding region on opposite sides of the barrier layer are sufficiently different from one another to prevent such tunneling.
REFERENCES:
patent: 5251224 (1993-10-01), Irikawa et al.
patent: 5386429 (1995-01-01), Naito et al.
patent: 5425041 (1995-06-01), Seko et al.
patent: 5502739 (1996-03-01), Kidoguchi et al.
patent: 5509024 (1996-04-01), Bour et al.
patent: 5544187 (1996-08-01), Kadoiwa et al.
patent: 5600667 (1997-02-01), Kidoguchi et al.
patent: 5737350 (1998-04-01), Motoda et al.
K. Iga, et al., "Electron Reflectance of Multiquantum Barrier (MQB)" Electronics Letters, vol. 22, No. 19, pp. 1008-1010, Sep. 11, 1986.
K. Kishino, et al., "Enhanced carrier confinement effect by the multiquantum barrier in 660 nm GaInP/AllnP visible lasers" Applied Physics Letter, vol. 58, No. 17, pp. 1822-1824, Apr. 29, 1991.
H. Hamada, et al., "Room-emperature CW operation of 610nm Band AlGalnP Strained Multiquantum well laser diodes with multiquantum barrier" Electronics Letters, vol. 28, No. 19, pp. 1834-1836, Sep. 10, 1992.
D. P. Bour, et al., "Strained Ga.sub.x In.sub.1-x P/(A1Ga).sub.0.5 In.sub.0.5 P Heterostructures and Quantum-Well Laser Diodes" IEEE Journal of Quantum Electronics, vol. 30, No. 2, pp. 593-606, 1994.
P. M. Smowton, et al., "Threshold current temperature dependence of GaInP/(A1.sub.y Ga.sub.1-y)InP 670 mm quantum well lasers" Applied Physics Letter, vol. 67, No. 9, pp. 1265-1267, Aug. 28, 1995.
British Search Report dated Mar. 12, 1997, for British Patent Application No. GB9626644.0.
Ngo Hung N.
Sharp Kabushiki Kaisha
LandOfFree
Separate confinement heterostructure laser device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Separate confinement heterostructure laser device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Separate confinement heterostructure laser device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1230586