High-frequency integrated circuit device and manufacture method

Details High-frequency integrated circuit device and manufacture method High-frequency integrated circuit device and manufacture method

1998-06-26

1999-11-23

Picard, Leo P.

Electricity: electrical systems and devices

Housing or mounting assemblies with diverse electrical...

For electronic systems and devices

361761, 361748, 361762, 361763, 361764, 361807, 257700, 257702, 257704, H05K 702

Patent

active

059911620

ABSTRACT:
A high-frequency power module is provided which has excellent heat radiating characteristics for carrying heat away from a power device element contained in the module. Also, the module can be miniaturized to a size of about 0.2 cm.sup.3 and can be inexpensively manufactured. In order to produce the module, a multilayer substrate for a high-frequency integrated circuit device is provided. The substrate contains a first substrate layer, a first metal layer, a cavity, and a first through hole. The first substrate layer has a first surface on which a first wiring layer is formed, and the first metal layer is formed at least indirectly on the first substrate layer. The cavity is formed through the first substrate layer such that an exposed portion of the first metal layer is exposed, and the first through hole is provided at the exposed portion of the first metal layer and extends through the first metal layer.

REFERENCES:
patent: 4965702 (1990-10-01), Lott et al.
patent: 5355102 (1994-10-01), Kornrumpf et al.
patent: 5483100 (1996-01-01), Marrs et al.
patent: 5727310 (1998-03-01), Casson et al.

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