Mutlilayered antifuse with intermediate metal layer

Details Mutlilayered antifuse with intermediate metal layer Mutlilayered antifuse with intermediate metal layer

1994-03-31

1996-05-07

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257209, 257529, H01L 2710, H01L 2900

Patent

active

055149006

ABSTRACT:
An antifuse structure in an integrated circuit including a first interconnection line, a second interconnection line formed over the first interconnection line, and a plurality of programming layers between the first and second interconnection lines. Each pair of programming layers has a metal layer therebetween which dissolves with the programming layers to form a conducting link during the programming of such antifuse structure. Such antifuse structure may also include a conductive plug between the programming layers and the second interconnection line.

REFERENCES:
patent: 5233217 (1993-08-01), Dixit et al.

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