Process for isolating a semiconductor layer on an insulator

Details Process for isolating a semiconductor layer on an insulator Process for isolating a semiconductor layer on an insulator

1995-10-10

1997-11-11

Fourson, George

Fishing, trapping, and vermin destroying

437 89, 148DIG154, H01L 2176

Patent

active

056863438

ABSTRACT:
A process for the isolation of a semiconductor layer on an insulator. A process for isolating a semiconductor layer on an insulator is disclosed that includes the steps of: forming a first insulating layer on a semiconductor substrate, and opening a window by etching the first insulating layer which becomes an epitaxial growth seed; depositing a semiconductor layer and growing an epitaxial layer which has the same crystal structure as the semiconductor substrate under the window; forming an active area of the epitaxial layer by a photolithographic process; forming a second insulating layer on and at the side of the active area and on the first insulating layer; and isolating an active area from the semiconductor layer by forming a third insulator layer in the window by an oxidation process.

REFERENCES:
patent: 4361600 (1982-11-01), Brown
patent: 5308445 (1994-05-01), Takasu
Wolf, S. Silicon Processing for the VLSI Era; Process Integration vol. 2, Lattice Press, 1990, pp. 66-78.

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