Method for forming semiconductor layer of thin film transistor b

Fishing – trapping – and vermin destroying

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437 40TFT, 437 41TFT, 437101, 148DIG1, H01L 21336

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active

056863209

ABSTRACT:
The present invention relates to a method for manufacturing a thin film transistor which can improve the yield, characteristics and reliability of the thin film transistor by selectively forming a semiconductor layer on a desired portion of a substrate using a temperature difference on the surface of the substrate achieved by heating the substrate with a lamp. The method comprises the steps of forming a black matrix layer of metal on a portion of the whole surface of an insulating glass substrate, forming an insulating layer for protecting the substrate on the whole substrate including the black matrix layer, forming source/drain electrodes on the insulating layer over the black matrix, selectively forming a semiconductor layer on the insulating layer including the source/drain electrodes, forming a gate insulating layer and forming a gate electrode.

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patent: 4822751 (1989-04-01), Ishizu et al.
patent: 4987008 (1991-01-01), Yamazaki et al.
patent: 5215588 (1993-06-01), Rhieu

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