Phase shifting mask and method of forming a pattern using the sa

Details Phase shifting mask and method of forming a pattern using the sa Phase shifting mask and method of forming a pattern using the sa

1996-11-22

1997-11-11

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430315, 430394, G03F 900

Patent

active

056862091

ABSTRACT:
A reflection phase shifting mask used to expose a pattern by forming reflected light having a phase difference upon reflection of light, includes a substrate for reflecting exposure light, a phase shifting layer formed on a portion on the substrate, and a light transmitting medium formed on the substrate and the phase shifting layer, wherein the thickness of the phase shifting layer is set such that the phase difference between light reflected by the substrate and light reflected by the phase shifting layer becomes 180.degree..

REFERENCES:
patent: 5040882 (1991-08-01), Markle
patent: 5318868 (1994-06-01), Hasegawa et al.
patent: 5328784 (1994-07-01), Fukuda
patent: 5338647 (1994-08-01), Nakagawa et al.
patent: 5399448 (1995-03-01), Nagata et al.

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