Method of making lightly-doped drain DMOS with improved breakdow

Details Method of making lightly-doped drain DMOS with improved breakdow Method of making lightly-doped drain DMOS with improved breakdow

1994-10-04

1996-05-07

Fourson, George

Fishing, trapping, and vermin destroying

437904, 437917, 148DIG126, H01L 218234, H01L 2176

Patent

active

055146082

ABSTRACT:
An LDD lateral DMOS transistor is provided in a lightly-doped epitaxial layer of a first conductivity above a substrate of the same conductivity. A highly-doped buried layer of the first conductivity is provided under the LDD lateral DMOS transistor to relieve crowding of electrical equipotential distribution beneath the silicon surface. In one embodiment, a gate plate is provided above the gate and the gate-edge of the drift region. An optional N-well provides further flexibility to shape electric fields beneath the silicon surface. The buried layer can also reduce the electric field in a LDD lateral diode and improves cathode-to-anode reversed-recovery characteristics.

REFERENCES:
patent: 4058822 (1977-11-01), Awane et al.
patent: 4153904 (1979-05-01), Tasch, Jr. et al.
patent: 4300150 (1981-11-01), Colak
patent: 4890146 (1989-12-01), Williams et al.
patent: 4929991 (1990-05-01), Blanchard
patent: 5055896 (1991-10-01), Williams et al.
patent: 5237193 (1993-08-01), Williams et al.

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