Semiconductor laser element and laser device using the same elem

Details Semiconductor laser element and laser device using the same elem Semiconductor laser element and laser device using the same elem

1994-08-09

1995-11-14

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

H01S 319

Patent

active

054673640

ABSTRACT:
A semiconductor laser of this invention, having a structure of an element composed of: carrier block layers, formed bilaterally externally of an active layer in section which is formed in the vertical direction from the surface of the element, for reducing a light guiding function of the active layer; wave guide layers provided bilaterally externally of said carrier block layers and clad layers provided so that the wave guide layers are sandwiched in between the clad layers. This invention overcomes a dilemma inherent in the conventional weakly guiding laser and LOC structured laser in terms of designing the device for controlling a guided mode. The present invention also solves the problems in terms of attaining higher outputting and a low dispersion of the radiation beams and improving a beam profile.

REFERENCES:
patent: 4328469 (1982-05-01), Scifres et al.
patent: 5172384 (1992-12-01), Goronkin et al.
patent: 5319660 (1994-06-01), Chen et al.
Applied Optics, vol. 19, No. 17, Sep. 1980, New York, pp. 2940-2941.
Heterostructure Lasers, Part A Fundamental Principles, H. C. Casey and M. B. Panish Academic Press, New York, 1978, pp. 31-57 (no month).
Tsang, A New-Current Injection Heterostructure Laser: The Double Barrier . . . , Applied Physics Letter 38(11), 1 Jun. 1981.
Yamada, Optimum Structure of a Potential Controlled Low Threshold Laser, Transactions of the IEICE, vol. E, 71, No. 6, Jun. 1988.

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