Amplifiers – With semiconductor amplifying device – Including distributed parameter-type coupling
Patent
1998-02-20
1999-11-23
Pascal, Robert
Amplifiers
With semiconductor amplifying device
Including distributed parameter-type coupling
330307, 333 32, H03F 360, H03F 314, H03F 738
Patent
active
059907479
ABSTRACT:
The present invention provides a high frequency amplifier circuit and a microwave integrated circuit which allow easy development of various models having different operating frequencies and other properties and improve the yield of production.
The high frequency amplifier circuit of the present invention comprises a high frequency transistor and a matching circuit connected between a terminal of the transistor and an external connection terminal, wherein
the matching circuit has a variable capacitive element of which one end is connected to a terminal of the transistor and the other end is connected to the external connection terminal, and a short stub of which one end is connected to the other end of the variable capacitive element and the other end is directly grounded.
REFERENCES:
patent: 4525678 (1985-06-01), Lehmann et al.
patent: 4658220 (1987-04-01), Heston et al.
patent: 4885541 (1989-12-01), Hayes
patent: 5818880 (1998-10-01), Kriz et al.
T.H. Chen, et al., "One Watt Q-Band Class A Pseudomorphic HEMT MMIC Amplifier." IEEE MTT-S Digest 1994 (pp. 805-808).
Chaki Shin
Nakajima Yasuharu
Mitsubishi Denki & Kabushiki Kaisha
Nguyen Patricia T.
Pascal Robert
LandOfFree
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