High voltage deep diode power semiconductor switch

Details High voltage deep diode power semiconductor switch High voltage deep diode power semiconductor switch

1976-04-19

1977-08-09

Wojciechowicz, Edward J.

Metal treatment

Compositions

Heat treating

357 37, 357 38, 357 60, 357 76, 357 88, 357 89, 357 90, H01L 700, H01L 2900, H01L 2974, H01L 2332

Patent

active

040408698

ABSTRACT:
A semiconductor switch is a lamellar body of semiconductor material having two major opposed surfaces and at least one group of four regions of alternate type conductivity. At least three of the four regions have recrystallized semiconductor material having a solid solubility of metal therein to impart the type conductivity thereto. Each of the first and third regions have the same type conductivity but different levels of impurity concentration. Each of the second and fourth regions have the same type conductivity but different levels of impurity concentration.

REFERENCES:
patent: 2813048 (1957-11-01), Pfann
patent: 3514715 (1970-05-01), Kosonocky

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