Stacked thin film assembly

Details Stacked thin film assembly Stacked thin film assembly

Filed on

1997-07-15

Date issued

1999-11-23

Examiner

Arroyo, Teresa M.

Patent Class

Active solid-state devices (e.g., transistors, solid-state diode

SubClass

Combined with electrical contact or lead

SubSubClass

Of specified material other than unalloyed aluminum

Other Related Categories

257752, 257767, H01L 2348

Type

Patent

Status

active

Patent number

059905565

Description

ABSTRACT:
A stacked film assembly for use as wiring in a semiconductor device having a bottom film (CVD-W film) 33 and a top film (Al alloy film) 12, where the surface roughness (Ra) of the bottom film is less than 100 .ANG. and the crystal orientation of the top film formed on this surface is controlled, a CVD method for the making thereof, and a semiconductor device in which the stacked film assembly is employed. Even when there is no lattice matching of the bottom film and the top film, crystal orientation of the top film can be sufficiently controlled to provide a targeted face ((111) face with aluminum film), and in particular it will be possible to readily form a stacked film assembly having a satisfactory barrier function as well as sufficient EM resistance and with good film formation.

REFERENCES:
patent: 5442235 (1995-08-01), Parrillo et al.
patent: 5569961 (1996-10-01), Lee
patent: 5581125 (1996-12-01), Maeda

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