Method of making bonded wafers

Details Method of making bonded wafers Method of making bonded wafers

1994-06-17

1996-05-07

Aftergut, Jeff H.

Adhesive bonding and miscellaneous chemical manufacture

Methods

Surface bonding and/or assembly therefor

148DIG12, 148DIG135, 156281, 437225, 437921, 437974, H01L 21304, H01L 21324

Patent

active

055142354

ABSTRACT:
A method is disclosed for obtaining bonded wafers of SOI type, where impurity redistribution in the bulk of the wafers is suppressed and the bonding strength between the wafers is substantially higher compared with that in the prior art. This is accomplished by forming a thermally grown oxide layer on the surface of the thinner one(bond wafer) of two monocrystalline silicon wafers having thicknesses different from each other by more than 50 .mu.m; then superposing the thinner wafer onto the other thicker wafer(base wafer); and finally conducting at least two heat treatments of the wafers at temperatures selected in the range of under 900.degree. C. for a period of time selected in the range of from 0.5 min. to 120 min.

REFERENCES:
patent: 3123953 (1964-03-01), Merkl
patent: 4671846 (1987-06-01), Shimbo et al.
patent: 5266824 (1993-11-01), Abe et al.
Lasky, J. B., "Wafer Bonding for Silicon-on-Insulator Technologies," Applied Physics Letters, 48(1), 6 Jan. 1986, pp. 78-80.
Furukawa, K., et al, "Lattice Configuration and Electrical Properties at the Interface of Direct Bonded Silicon," Extended Abstracts of the 18th (1986 International) Conference on Solid State Devices and Materials, Tokyo, 1986, pp. 533-536.
"Double-Cantilever Cleavage Mode of Crack Propagation", Peter Gillis et al., pp. 647-658, Mar. 1964, Journal of Applied Physics, vol., 35, No. 3.
"Bonding of Silicon Wafers for Silicon-on-Insulator", W. P. Maszara et al., J. Appl. Physics 64(10), Nov. 15, 1988, pp. 4943-4950.

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