In situ wafer cleaning process

Details In situ wafer cleaning process In situ wafer cleaning process

1998-01-07

1999-11-23

Kunemund, Robert

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438906, 438974, H01L 21306

Patent

active

059900148

ABSTRACT:
A low pressure in situ wafer cleaning process and apparatus are disclosed wherein a low pressure external combustion reactor 2 in combination with a low pressure furnace 14 produces a stream of a combustion product through the combustion of a halogenated hydrocarbon and oxygen. The combustion product is contacted with semiconductor wafers in the low pressure furnace to remove Group I and II metals. After a sufficient time has passed for cleaning, the combustion reactor and furnace are purged with an inert gas to remove the combustion product. In a preferred embodiment, the halogenated hydrocarbon is trans-1,2-dichloroethylene and the combustion product is vaporous hydrochloric acid.

REFERENCES:
patent: 4544416 (1985-10-01), Meador et al.
patent: 5288662 (1994-02-01), Lagendijk et al.
patent: 5352636 (1994-10-01), Beinglass
patent: 5599425 (1997-02-01), Lagendijk et al.
Damon DeBusk et al., "Investigating a trans-dichloroethylene vapor cleaning process," MICRO, pp. 39-43, Sep. 1995.
Schumacher Brochure, Trans-LC.TM., Schumacher's "Ozone Friendly" TCA Replacement, Jan. 7, 1994, which includes Attachments C, D and E: A. K. Hochberg et al., "A New Liquid Chlorine Source for Silicon Oxidation," J. Electrochem. Soc., vol. 139, No. 12, Dec. 1992; D. DeBusk et al., "Characterization of Trans 1,2 Dichloroethane as a substitute for 1,1,1-Trichloroethane in Silicon Oxidations;" and G. W. Dawson et al., "t-DCE, An Ozone Friendly TCA Alternative."

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