Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Patent
1998-01-06
1999-11-23
Niebling, John F.
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
438287, H01L 2100, H01L 21336
Patent
active
059899271
ABSTRACT:
A non-volatile semiconductor memory cell employing a field effect transistor having a gate of the metal/ferroelectric structure or the metal/ferroelectric/metal/insulator structure, wherein the ferroelectric layer is a layer of bismuth titanate containing bismuth more than the stoichiometric quantity or a piled layer of bismuth titanate of the stoichiometric composition and bismuth titanate containing bismuth more than the stoichiometric quantity, both of which have a less amount of dielectric constant and remanent polarization, thereby enabling the non-volatile memory cell to memorize and erase binary information with a less amount of voltage to be applied to the gate.
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Ghyka Alexander G.
Niebling John F.
OKI Electric Industry Co., Ltd.
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