Method of making a self-aligned contact in semiconductor device

Details Method of making a self-aligned contact in semiconductor device Method of making a self-aligned contact in semiconductor device

1993-09-08

1995-11-14

Quach, T. N.

Fishing, trapping, and vermin destroying

437195, 437239, 437984, H01L 21283

Patent

active

054666376

ABSTRACT:
A method of making a self-aligned contact in a semiconductor device has some advantages in that the increasing tolerance of contact mask for following the contact hole may lead to reduction of the contact area by the following means: at the side wall of contact hole which connects the first conductive line and the third line up and down, a silicon spacer which insulates from the second conductive line is formed; then, the said spacer in part or whole is thermally oxidized and the upper part of silicon spacer is insulated, thus forming the contact hole thereof.

REFERENCES:
patent: 4951100 (1990-08-01), Parrillo
patent: 4956312 (1990-11-01), Van Laarhoven
patent: 5153145 (1992-10-01), Lee et al.
patent: 5234850 (1993-08-01), Liao
patent: 5275972 (1994-01-01), Ogawa et al.

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