Method for producing semiconductor articles

Fishing – trapping – and vermin destroying

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437966, 437170, 148DIG12, H01L 2176

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054666317

ABSTRACT:
A method for producing a semiconductor article comprises the steps of preparing a first substrate having a non-porous semiconductor layer on a porous semiconductor region, forming unevenness on the surface at the side of said semiconductor layer of said first substrate; bonding the surface of said first substrate having said unevenness formed thereon to the surface of said second substrate so as to be in contact with each other, and removing said porous semiconductor under the state that said semiconductor layer is bonded to said second substrate to thereby transfer said semiconductor layer from said first substrate onto said second substrate.

REFERENCES:
patent: 3756877 (1973-09-01), Muraoka et al.
patent: 3962052 (1976-06-01), Abbas
patent: 3997381 (1976-12-01), Wanlass
patent: 4142925 (1979-03-01), King et al.
patent: 4171242 (1979-10-01), Liu
patent: 4177094 (1979-12-01), Kroon
patent: 4198263 (1980-04-01), Matsuda
patent: 4380865 (1983-04-01), Frye et al.
patent: 4771016 (1988-09-01), Bajor et al.
patent: 4806996 (1989-02-01), Luryi
patent: 4878957 (1989-11-01), Yamaguchi et al.
patent: 4891329 (1990-01-01), Reisman et al.
patent: 4897362 (1990-01-01), Delgado
patent: 4939101 (1990-07-01), Black et al.
patent: 4962051 (1990-10-01), Liaw
patent: 5013681 (1991-05-01), Godbey et al.
patent: 5091330 (1992-02-01), Cambou et al.
patent: 5110748 (1992-05-01), Sarma et al.
patent: 5204282 (1993-04-01), Tsuruta et al.
Journal of the Electrochemical Society, Mar. 1984, vol. 131, No. 3, L. Liou et al., "Amorphous Silicon Produced by Ion Implantation."
Electrochemical Society: Solid State Science, Apr. 1967, S. M. Hu et al., "Observation of Etching of n-Type Silicon in aqueous HF Solutions."
Journal of Applied Physics, vol. 60, No. 1, Jul. 1986, H. Takai et al., "Porous Silicon Layers and its Oxide for the Silicon-on-Insulator Structure."
Applied Physics Letters, Oct. 1986, vol. 49, pp. 1104-1106, T. L. Lin, et al., "New Silicon-on-Insulator Technology Using a Two-Step Oxidation Technique."
Japanese Journal of Applied Physics, vol. 16, No. 5, May 1977, N. Tsubouchi et al., "Oxidation of Silicon in High-Pressure Steam."
IBM Technical Disclosure Bulletin, vol. 27, No. 8, Jan. 1985, L. A. Nesbit, "Defect-Free Silicon on Insulator by Oxidized Porous Silicon."
Japanese Journal of Applied Physics, vol. 23, No. 10, pp. L815-L817, Oct. 1984, "Device Layer Transfer Technique Using Chemi-Mechanical Polishing", T. Hamaguchi et al.
IBM Technical Disclosure Bulletin, vol. 14, No. 11, Apr. 1972, G. H. Schwuttke et al., "Etching of Vertical Walled Patterns in (100) Silicon."
Applied Physics Letters, 49, pp. 716-718, Sep. 1986, J. D. Benjamin et al., "Large Area, Uniform Silicon-on-Insulator Using a Buried Layer of Oxidized Porous Silicon."
Applied Physics Letters, 49, No. 10, Sep. 1990, L. T. Canham, "Silicon Quantum Wire Array Fabrication by Electrochemical and Chemical Dissolution of Wafers."
Journal of the Electrochemical Society, vol. 130, No. 7, Jul. 1983, G. Bomchil et al., "Pore Size Distribution in Porous Silicon Studied by Adsorption Isotherms."
Solid State Electronics, vol. 24, pp. 159-164, Mar. 1980, Kazuo Imai, "A New dielectric Isolation Method Using Porous Silicon."
The Bell System Technical Journal, vol. 35, pp. 333-347, 1956, A. Uhlir, Jr., "Electrolytic Shaping of Germanium and Silicon."
Materials Letters, vol. 7, No. 3, Sep. 1988, L. Vescan et al., "Low-Pressure Vapor-Phase Epitaxy of Silicon on Porous Silicon."
Journal of Crystal Growth, vol. 63, No. 3, Oct. 1983, "Single-Crystal Silicon on Non-Single-Crystal Insulators."
Journal of the Electrochemical Society, vol. 127, No. 2, Feb. 1980, Takashi Unagami, "Formation Mechanism of Porous Silicon Layer by Anodization in HF Solution."
Japanese Journal of Applied Physics, vol. 28, No. 8, 1989, J. Haisma et al., "Silicon-on-Insulator Wafer Bonding-Wafer Thinning Technological Evaluations."
Microelectronic Engineering, vol. 8, 293-310, (1988), G. Bomchil et al., "Porous Silicon: The Material and its Applications to SOI Technologies".
Solid-State Electronics, vol. 24, pp. 159-164 (1981), Kazuo Imai, "A New Dielectric Isolation Method Using Porous Silicon."
Journal of the Electrochemical Society, vol. 130, No. 7, pp. 1612-1614, Jul. 1983, G. Bomchil et al., "Pore Size Distribution in Porous Silicon Studied by Adsorption Isotherms." 1983.
The Bell System Technical Journal, vol. 35, pp. 333-347, (1956), A. Uhlir, Jr., "Electrolytic Shaping of Germanium and Silicon."
Journal of the Electrochemical Society, vol. 127, No. 2, pp. 476-483, 1980 Feb. 1980, T. Unagami, "Formation Mechanism of Porous Silicon Layer by Anodization in HF Solution."
Journal of Crystal Growth, vol. 63, No. 3, pp. 547-553, Oct. 11, 1983, S. Imai et al., "Crystalline Quality of Silicon layer Formed by Fipos Technology."

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