Method of making semiconductor integrated circuit having isolati

Details Method of making semiconductor integrated circuit having isolati Method of making semiconductor integrated circuit having isolati

1994-08-29

1995-11-14

Thomas, Tom

Fishing, trapping, and vermin destroying

437 28, 437 69, H01L 218239

Patent

active

054666236

ABSTRACT:
A method of manufacturing a semiconductor memory device having a peripheral circuit portion, the operating voltage of which is relatively high and a memory array portion, the operating voltage of which is relatively low comprises the steps of forming an inversion preventing layer on the peripheral circuit portion, forming an oxide layer for isolation between-devices adjacent thereto, forming on the memory array portion the inversion preventing layer, the impurity concentration of which is higher than that of the peripheral circuit portion and forming the oxide layer on the peripheral circuit portion at the same time that the oxide layer for isolation between devices is formed adjacent thereto.

REFERENCES:
patent: 3961999 (1976-06-01), Antipov
patent: 4044454 (1977-08-01), Magdo
patent: 4055444 (1977-10-01), Rao
patent: 4170492 (1979-10-01), Bartlett et al.
patent: 4280271 (1981-07-01), Lou et al.
patent: 4282648 (1981-08-01), Yu et al.
patent: 4352236 (1982-10-01), McCollum
patent: 4536947 (1985-08-01), Bohr et al.
patent: 4574465 (1986-03-01), Rao
patent: 4675982 (1987-06-01), Noble, Jr. et al.
patent: 4910161 (1990-03-01), Arimoto
patent: 5071784 (1991-10-01), Takeuchi et al.
Local Oxidation of Silicon by J. A. Appels et al., Philips Res. Repts. 25, 118-132, 1970.
Deep Trench Isolated CMOS Devices by R. D. Rung et al., 1982, p. 237.

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