Method of producing an LDMOS transistor having reduced dimension

Fishing – trapping – and vermin destroying

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

437 15, 437 41, 437203, 148DIG96, 148DIG168, 257335, 257336, 257343, H01L 21265

Patent

active

054666163

ABSTRACT:
A method of producing a reduced-size LDMOS transistor having reduced leakage and latch-up possibility by reducing the vertical projective area of the source electrodes of the LDMOS transistor, which is done by forming first trenches to reach a substrate of the LDMOS transistor.

REFERENCES:
patent: 4065783 (1977-12-01), Ouyang
patent: 4070690 (1978-01-01), Wickstrom
patent: 4084175 (1978-04-01), 0uyang
patent: 4102714 (1978-07-01), DeBar et al.
patent: 4272302 (1981-06-01), Jhabvala
patent: 4374455 (1983-02-01), Goodman
patent: 4420379 (1983-12-01), Tonnel
patent: 4502208 (1985-03-01), McPherson
patent: 4503598 (1985-03-01), Vora et al.
patent: 4516143 (1985-05-01), Love
patent: 4567641 (1986-02-01), Baliga et al.
patent: 4682405 (1987-07-01), Blanchard et al.
patent: 4914050 (1990-04-01), Shibata
patent: 5119159 (1992-06-01), Hoshi
patent: 5304827 (1994-04-01), Malhi et al.
patent: 5306652 (1994-04-01), Kwon et al.
patent: 5315150 (1994-05-01), Furuhata
patent: 5369045 (1994-11-01), Ng et al.
patent: 5371394 (1994-12-01), Ma et al.
patent: 5395777 (1995-03-01), Yang

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of producing an LDMOS transistor having reduced dimension does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of producing an LDMOS transistor having reduced dimension, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of producing an LDMOS transistor having reduced dimension will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1220519

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.