Fishing – trapping – and vermin destroying
Patent
1991-09-04
1993-01-12
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437 47, 437 52, 437 60, H01L 21265, H01L 2170
Patent
active
051790335
ABSTRACT:
A method for manufacturing a semiconductor device by (i) depositing a first insulating layer over a semiconductor substrate having a polysilicon gate, and then opening a first contact hole so as to form a first insulating film, (ii) depositing a second polysilicon layer over the semiconductor substrate including the first contact hole, and then patterning the same so as to form a second polysilicon film, (iii) depositing a second insulating film over the semiconductor substrate including the second polysilicon film, and then opening a second contact hole so as to form a second insulating film, (iv) depositing a third polysilicon layer over the semiconductor substrate including the second contact hole, and then patterning the same as to form a third polysilicon film as a capacitor bottom electrode, (v) implanting ions in the second polysilicon film in a region other than a capacitor formation region so as to form a source/drain region, (vi) depositing a third insulating layer over the whole surface, and then opening a contact window so as to form a third insulating film as a capacitor insulating film, and (vii) depositing a fourth polysilicon layer over the semiconductor substrate including the contact window, and then patterning the same so as to make a fourth polysilicon film remain as a capacitor top electrode in only the capacitor formation region.
REFERENCES:
patent: 4716548 (1987-12-01), Mochizuki
patent: 4774203 (1988-09-01), Ikeda et al.
patent: 4828629 (1989-05-01), Ikeda et al.
patent: 4975875 (1990-12-01), Ito
patent: 5057898 (1991-10-01), Adan et al.
Chaudhuri Olik
Sharp Kabushiki Kaisha
Trinh Loc Q.
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