Transistor having an emitter with a low impurity concentration p

Details Transistor having an emitter with a low impurity concentration p Transistor having an emitter with a low impurity concentration p

1975-03-25

1977-02-08

Wojciechowicz, Edward J.

357 37, 357 40, 357 88, 357 89, 357 90, H01L 2972, H01L 2900, H01L 2702

Patent

active

040074749

ABSTRACT:
A semiconductor device having a high current amplification gain which includes a low impurity concentration in the emitter region of the device, an injected minority carrier diffusion length L greater than the width of the emitter, and a high impurity concentration region of the same type as the emitter overlying at least a portion of said emitter region which provides a built-in-field where there is a drift current of minority carriers back toward the base region. The built-in field is larger than kT(qL) so that the drift current adjacent the built-in-field substantially cancels the minority carrier diffusion current injected from the base region.

REFERENCES:
patent: 2822310 (1958-04-01), Stieltjes et al.

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