Memory device with improved yield and reliability

Excavating

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

371 4018, G11C 2900

Patent

active

057780129

ABSTRACT:
A memory device including first and second memory cell arrays in which are stored respectively user data and error identification and correction data. The memory device also includes first and second decoding means operationally connected to the first and the second memory cell arrays for producing select user data signals and select error identification and correction data signals. The memory device further includes error identification means operationally coupled to the first and the second decoding means. The memory device also comprises error correction means operationally connected to the first and the second decoding means and to the error identification means. Finally the memory device includes a control unit operationally connected to the second decoding means, to the error identification means and to the error correction means to enable the second decoding means and the error correction means if the error identification means detect an error in the select user data signals.

REFERENCES:
patent: 4112502 (1978-09-01), Scheuneman
patent: 4249253 (1981-02-01), Gentili et al.
patent: 4612640 (1986-09-01), Mehrotra et al.
patent: 4903268 (1990-02-01), Hidaka et al.
patent: 5056095 (1991-10-01), Horiguchi et al.
patent: 5063565 (1991-11-01), Ohashi
patent: 5117428 (1992-05-01), Jeppesen, III et al.
patent: 5228046 (1993-07-01), Blake et al.
patent: 5263031 (1993-11-01), Inoue
patent: 5287364 (1994-02-01), Kimura
patent: 5392301 (1995-02-01), Fukushima
patent: 5448578 (1995-09-01), Kim
patent: 5469451 (1995-11-01), Henmi
patent: 5621682 (1997-04-01), Tanzawa et al.
patent: 5682394 (1997-10-01), Blake et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Memory device with improved yield and reliability does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Memory device with improved yield and reliability, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory device with improved yield and reliability will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1214665

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.