Process for manufacturing a schottky diode with enhanced barrier

Details Process for manufacturing a schottky diode with enhanced barrier Process for manufacturing a schottky diode with enhanced barrier

1996-08-23

1999-03-30

Niebling, John F.

Semiconductor device manufacturing: process

Forming schottky junction

Compound semiconductor

438581, 438582, H01L 2134, H01L 29872

Patent

active

058888918

ABSTRACT:
A schottky diode is formed of a sintered palladium platinum silicide in contact with a lightly doped silicon surface in which the platinum and palladium are present in a ratio of about one part to about 10 parts respectively, by weight.

REFERENCES:
patent: 4206540 (1980-06-01), Gould
patent: 4398344 (1983-08-01), Gould
patent: 4408216 (1983-10-01), Gould
patent: 4946803 (1990-08-01), Ellwanger
J.L. Freeouf, "Silicide interface stoichiometry.sup.a) ", J. Vac. Sci. Technol., vol. 18, No. 3, Apr. 1981, pp. 910-916.
R.W. Bower, et al., "Formation Kinetics and Structure of Pd.sub.2 Si Films on Si*", State Electronics, 1973, vol. 16, pp. 1461-1471.

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