Process of growing multiple quantum well structure for adjusting

Details Process of growing multiple quantum well structure for adjusting Process of growing multiple quantum well structure for adjusting

1997-06-05

1999-03-30

Dutton, Brian

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

438 39, H01L 2100

Patent

active

058888403

ABSTRACT:
While compound semiconductor materials are being selectively grown on an open stripe area of a compound semiconductor substrate for forming a multiple quantum well structure, one of the depositing time and the gas flow rate is gradually decreased from the bottom of the multiple quantum well structure toward the top thereof; although the top surface area of the multiple quantum well structure is decreased from the bottom toward the top, the component layers of the multiple quantum well structure are regulated to a target thickness, and the half band width of photoluminescence spectrum is improved.

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patent: 5574289 (1996-11-01), Aoki et al.
patent: 5580818 (1996-12-01), Sakata
"Low Threshold and High Uniformity for Novel 1.3-.mu.m-Strained InGaAsP MQW DC-PBH LD's Fabricated by the All-Aelective MOVPE Technique"; Sakata et al; IEEE; vol. 9; No. 3; Mar. 1997; pp. 291-293.
"Selective metalorganic vapor phase epitaxial growth of InGaAsP/InP layers with bandgap energy control in InGaAs/InGaAsP multiple-quantum well structures" Sasaki et al; Journal of Crystal Growth; 132; (1993) Sep. II, Nos. 3/4, pp. 435-443.
"InGaAs/InGaAsP MQW Electroabsorption Modulator Integrated with a DFB Laser Fabricated by Band-Gap Energy Control Selective Area MOCVD"; Aoki et al; IEEE Journal of Quantum Electronics; vol. 29; No. 6; Jun. 1993; pp. 2088-2096.
"1.24-1.66 .mu.m quantum energy tuning for simultaneously grown InGaAs/InP quantum wells by selective-area metalorganic vapor pahse epitaxy"; Suzuki et al; Journal of Crystal Growth; 145; 1994; pp. 249-255.

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