Method of making N-channel MOS integrated circuits

Details Method of making N-channel MOS integrated circuits Method of making N-channel MOS integrated circuits

1976-01-12

1977-10-25

Ozaki, G.

Metal treatment

Compositions

Heat treating

148187, H01L 2126

Patent

active

040554449

ABSTRACT:
An improved method of making N-channel, silicon gate, MOS integrated circuits such as used for memories is disclosed. Structural damage to the crystalline silicon such as caused by an ion implant process is reduced by a high temperature treatment in an inert atmosphere followed by oxidation. This treatment also alters the concentration profile of the implanted impurity to provide improved device characteristics.

REFERENCES:
patent: 3508126 (1970-04-01), Newman et al.
patent: 3717790 (1973-02-01), Dalton et al.
patent: 3745070 (1973-07-01), Yada et al.
patent: 3771218 (1973-11-01), Langdon
patent: 3793088 (1974-02-01), Eckton, Jr.
patent: 3880676 (1975-04-01), Douglas et al.

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