Semiconductor switching apparatus and method of controlling a se

Details Semiconductor switching apparatus and method of controlling a se Semiconductor switching apparatus and method of controlling a se

1996-08-21

1998-07-07

Callahan, Timothy P.

Miscellaneous active electrical nonlinear devices, circuits, and

Gating

Utilizing three or more electrode solid-state device

327438, 327582, H03K 1772

Patent

active

057775060

ABSTRACT:
An inductance in a path (R1) from a gate electrode (3G) of a GTO (3) through a gate driver (4) and a node (13) to a cathode electrode (3K) is determined so that a turn-off gain may be not more than 1. At a turn-off, a main current (I.sub.A) is entirely commutated from the gate electrode (3G) towards the node (13) through the gate driver (4) in a direction reverse to a turn-off control current (I.sub.G) A peak voltage suppressing circuit (5) clamps an anode-cathode voltage (V.sub.A-K) which rises on, to a prescribed voltage value for a prescribed time. This prevents losses caused by a snubber circuit. Commutation of a main current to the gate prevents locally concentrating in the cathode side of the semiconductor switching element, to thereby increase the turn off capability of the semiconductor switching element. Further, this prevents or reduces dissipation of large amount produced by a discharge of the electric charges from a snubber capacitor. Thus, reduction in dissipation and in size of the whole apparatus can be achieved.

REFERENCES:
patent: 5237225 (1993-08-01), Gruning
patent: 5493247 (1996-02-01), Gruning

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