Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1996-02-01
1998-07-07
Hardy, David B.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257741, 257745, 257763, 257765, 257751, 257771, H01L 2943
Patent
active
057773890
ABSTRACT:
A method for fabricating a semiconductor device includes: successively laminating a pair or more pairs of Ti and Al thin films on an n type GaAs substrate thereby to form Ti/Al laminated films; and performing thermal processing to the n type GaAs substrate and the Ti/Al laminated films at a temperature lower than the temperature at which Al of the Ti/Al laminated films and GaAs of the n type GaAs layer react with each other, to make the Ti/Al laminated films have ohmic junction with the n type GaAs layer thereby to form an ohmic electrode. Therefore, the Ti/Al laminated layer film comprising materials which are not likely to intrude into the n type GaAs layer is alloyed to Al.sub.3 Ti alloy by the annealing, and during the annealing, Ga atoms are out-migrated from the n type GaAs layer, and the Si atoms as dopants in the n type GaAs layer are present in the junction interface of the n type GaAs layer with the Ti/Al laminated layer film, thereby to form an ohmic contact. Thereby, a semiconductor device provided with ohmic electrodes having heat-resistant property and shallow junction surfaces is obtained.
REFERENCES:
patent: 4141020 (1979-02-01), Howard et al.
patent: 5260603 (1993-11-01), Kamura et al.
patent: 5589712 (1996-12-01), Kawashima et al.
Wada et al, "Schottky Barrier Height Variation With Metallurgical Reactions in Aluminum-Titanium-Gallium Arsenide Contacts", Solid State Electronics, vol. 26, No. 6, 1983, pp. 559-564.
Hardy David B.
Mitsubishi Denki & Kabushiki Kaisha
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