Integrated circuit interconnect structure with back reflection s

Details Integrated circuit interconnect structure with back reflection s Integrated circuit interconnect structure with back reflection s

1995-12-26

1998-07-07

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257538, 257664, 257665, 257754, 257760, H01L 2900, H01L 2358, H01L 2348, H01L 2352

Patent

active

057773742

ABSTRACT:
A polysilicon interconnect is formed on a microelectronic circuit substrate for conducting signals from a driver to a non-polycrystalline silicon contact which has higher impedance than the interconnect. A plurality of electronic "speed bumps" are spaced along the interconnect for disturbing or disrupting signals propagating along the interconnect toward the contact and thereby reducing undesirable back reflection and ringing. The speed bumps can include capacitance altering elements in the form of dielectric strips, or resistance altering elements in the form of low resistance doped areas or high resistance amorphous areas. The speed bumps can include first and second elements having different values of capacitance or resistance which are spaced along the interconnect in alternating relation.

REFERENCES:
patent: 5442225 (1995-08-01), Rostoker et al.
patent: 5567988 (1996-10-01), Rostoker et al.

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