Method for fabricating a low loss varactor diode

Details Method for fabricating a low loss varactor diode Method for fabricating a low loss varactor diode

1981-05-11

1983-05-03

Roy, Upendra

Metal treatment

Compositions

Heat treating

29576B, 29576E, 148187, 357 14, 357 91, H01L 21263, H01L 21203, H01L 2122

Patent

active

043819524

ABSTRACT:
A low conductivity, first conductivity type epitaxial layer is formed on a substrate of high conductivity, first conductivity type semiconductor material. Conductivity modifiers of second conductivity type are then implanted into the epitaxial layer so as to create a PN junction in the epitaxial layer. The substrate is next thinned, and conductivity modifiers of first conductivity type are implanted into the thinned surface so as to form a very high conductivity layer at the thinned surface.

REFERENCES:
patent: 3523838 (1970-08-01), Heidenreich
patent: 3634738 (1972-01-01), Leith
patent: 3638300 (1972-02-01), Foxhall
patent: 3840306 (1974-10-01), Raabe
patent: 3878001 (1975-04-01), Olk
patent: 4038106 (1977-07-01), Kawamoto
patent: 4106953 (1978-08-01), Onodera
patent: 4226648 (1980-10-01), Goodwin et al.
patent: 4230505 (1980-10-01), Wu et al.
patent: 4250514 (1981-02-01), Raabe
Large-Area Varactor Diode For Electrically Tunable, High-Power UHF Bandpass Filter, G. A. Swartz et al., IEEE Transactions on Electron Devices, vol. ED-27, No. 11, Nov. 1980, pp. 2146-2151.

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