Process for preparing multilayer interconnection

Details Process for preparing multilayer interconnection Process for preparing multilayer interconnection

1980-09-04

1983-05-03

Walton, Donald L.

Metal working

Method of mechanical manufacture

Assembling or joining

29571, H01L 2190

Patent

active

043815952

ABSTRACT:
A multilayer interconnection is prepared by forming a stable insulating film on a nitride film which is formed on a first interconnection metal layer, and then, a second interconnection metal layer is formed on the insulating film. The insulating film can be made of aluminum oxide, an oxynitride or the other metal oxide. A silicon rich layer can be used for this purpose.

REFERENCES:
patent: 3771218 (1973-11-01), Langdon
patent: 3803705 (1974-04-01), Goodwin
patent: 4115795 (1978-09-01), Masuoka et al.
patent: 4121240 (1978-10-01), Katto
patent: 4121241 (1978-10-01), Drake et al.
patent: 4206472 (1980-06-01), Chu et al.
Ryden et al., A Metallization Providing Two Levels of Interconnect for Beam Leaded Silicon Integrated Circuits, Bell Telephone Labs., pp. 597-600.

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