Tantalum thin film capacitor

Details Tantalum thin film capacitor Tantalum thin film capacitor

1980-08-20

1982-12-14

Goldberg, Elliot

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

361322, H01G 410

Patent

active

043640990

ABSTRACT:
A tantalum film capacitor has an .alpha.-tantalum as a lower electrode, a chemical conversion layer of .alpha.-tantalum as a dielectric and an upper electrode, an improvement involving forming a highly nitrogen-doped tantalum film between the .alpha.-tantalum and a substrate, and also, another improvement involving forming a transitional thin tantalum layer between said highly nitrogen-doped tantalum film and said .alpha.-tantalum. The nitrogen concentration of the highly nitrogen-doped tantalum film is from 14 to 30 atomic %. The electrical properties, especially leakage current, are improved over those of the prior art. A disadvantage of the conventional .alpha.-tantalum thin film capacitor, that is the necessity of using an expensive partial glazed Al.sub.2 O.sub.3 substrate, is eliminated, and a non-glazed Al.sub.2 O.sub.3 substrate can be used in the present invention.

REFERENCES:
patent: 3847658 (1974-11-01), Kumagai
patent: 4058445 (1977-11-01), Anders
patent: 4200502 (1980-04-01), Mung

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