Semiconductor memory device

Static information storage and retrieval – Format or disposition of elements

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365 63, 36523003, G11C 502

Patent

active

RE0361690

ABSTRACT:
A semiconductor memory device is provided having a read out gate for detecting and providing to a main I/O line pair the potential difference of a sub-data input/output line pair, and a write gate for transferring data of the main I/O line pair to the sub-data input/output line pair in an energy region surrounded by a sense amplifier region and a word line coupling region. By providing the read out gate and the write gate in the empty region which was not conventionally used, the access operation can be carried out at high speed without increasing the chip area of the semiconductor memory device.

REFERENCES:
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patent: 5097440 (1992-03-01), Konishi
patent: 5274595 (1993-12-01), Seok et al.
"A 40ns 64Mb DRAM with Current-Sensing Data-Bus Amplifier" by Masao Taguchi et al., 1991 IEEE International Solid-State Circuits Conference, ISSCC91 Digest of Technical Papers, pp. 112-113.
"A 45ns 64Mb DRAM with a Merged Match-line Test Architecture", by Shigeru Mori et al., 1991 IEEE International Solid-State Circuits Conference, ISSCC91 Digest of Technical Papers, pp. 110-111.
Ashwin H. Shah et al., "A 4-Mbit Dram with Trench-Transistor Cell", IEEE Journal of Solid-State Circuits, vol. sc-21, No. 5, Oct. 1986, pp. 618-624.
Goro Kitsukawa et al., "A 23-ns 1-Mb BiCMOS DRAM", IEEE Journal of Solid-State Circuits, vol. 24, No. 5, Oct. 1990, pp. 1102-1111.
Kiyoto Ohta et al., "A 1-Mbit DRAM with 33-MHz Serial I/O Ports", IEEE Journal of Solid-State Circuits, vol. sc-21, No. 5, Oct. 1986, pp. 649-654 .

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