Method for producing integrated semiconductor light emitter

Details Method for producing integrated semiconductor light emitter Method for producing integrated semiconductor light emitter

1981-05-06

1983-03-29

Roy, Upendra

Metal treatment

Compositions

Heat treating

29576B, 29576E, 148175, 148186, 148187, 357 91, 357 61, H01L 21263, H01L 3300

Patent

active

043782558

ABSTRACT:
A multilayer, III-V semiconductive structure can be disordered and shifted up in energy gap into a single crystalline form by a Zinc diffusion. More specifically, all or selected portions of a multilayer of either gallium arsenide/aluminum arsenide or gallium arsenide/aluminum gallium arsenide can be converted into single crystal aluminum gallium arsenide having a higher energy gap than that of the original structure by the process of a Zinc diffusion at low temperature. Other active devices can then be constructed in the higher energy gap material using established semiconductor processing steps.

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