Surface denuding of silicon wafer

Details Surface denuding of silicon wafer Surface denuding of silicon wafer

1983-06-03

1985-10-22

Roy, Upendra

Metal treatment

Compositions

Heat treating

29576B, 29576T, 148187, 148DIG23, 148DIG24, 357 91, H01L 21265, H01L 754, H01L 21322

Patent

active

045486549

ABSTRACT:
A process is disclosed for preparing silicon wafers having a high quality, high lifetime surface layer and a bulk region characterized by a low lifetime and by a high density of precipitated oxygen gettering sites. A wafer having a relatively high concentration of interstitial oxygen is heated in a reducing ambient at a sufficiently high temperature and a sufficiently long time to cause a surface layer to be denuded of oxygen related defects and dislocations. The temperature is then ramped down to a lower temperature and the wafer is maintained at this lower temperature for a sufficient time to allow precipitation of oxygen within the bulk of the wafer.

REFERENCES:
patent: 4116719 (1978-09-01), Shimizu et al.
patent: 4220483 (1980-09-01), Cazcarra
patent: 4314595 (1982-02-01), Yamamoto et al.
patent: 4364779 (1982-12-01), Kamgar
patent: 4376657 (1983-03-01), Nagasawa et al.
patent: 4437922 (1984-03-01), Bischoff et al.
Chakravarti et al., IBM-TDB, 25, (1982), 1910.
Craven et al., Solid St. Tech., Jul. 1985, p. 55.

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