Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1980-09-09
1983-03-29
Rutledge, L. Dewayne
Metal working
Method of mechanical manufacture
Assembling or joining
29571, 29572, 29590, 29591, 148 15, 148174, 148175, 148191, 156653, 156657, 1566591, 427 87, 427 93, 357 24, 357 61, 357 91, H01L 2120, H01L 21285, H01L 2714
Patent
active
043779042
ABSTRACT:
A monolithic charge-coupled infrared imaging device (CCIRID) is fabricated on N-type HgCdTe. A native oxide layer on the semiconductor is used, in combination with ZnS to provide first level insulation. An opaque field plate over first level insulation is provided for signal channel definition. Second level insulation (ZnS) is substantially thicker than the first level, and is provided with a stepped or sloped geometry under the first level gates. Input and output diodes are provided with MIS guard rings to increase breakdown voltages.
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patent: 3931674 (1976-01-01), Amelio
patent: 3977018 (1976-08-01), Catagnus et al.
patent: 4035665 (1977-07-01), Borel
patent: 4097885 (1978-06-01), Walsh
patent: 4273596 (1981-06-01), Gutierrez et al.
Anderson, "Tunnel Current--Infrared Charge Coupled Devices" Infrared Physics, vol. 17, No. 2, Mar. 1977, pp. 147-164.
Chapman et al, "HgCdTe Charge-Coupled Device Shift Registers", Applied Phys. Letters, vol. 32 (7), Apr. 1, 1978, pp. 434-436.
Buss Dennis D.
Chapman Richard A.
Kinch Michael A.
Comfort James T.
Honeycutt Gary C.
Rutledge L. Dewayne
Saba W. G.
Sharp Melvin
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