Low leakage current GaInAsP/InP buried heterostructure laser and

Details Low leakage current GaInAsP/InP buried heterostructure laser and Low leakage current GaInAsP/InP buried heterostructure laser and

1987-10-05

1988-10-18

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

047792825

ABSTRACT:
The device provided is a GaInAsP/InP laser, of the buried heterostructure type, fabricated by a two-step liquid-phase epitaxy technique. The active region is defined by a mesa etch to achieve low threshold current and a single transverse optical mode. The mesa is subsequently buried by a second step of liquid-phase epitaxy for optical and current confinement. A low bandgap heterobarrier is employed to reduce leakage current near the active region at high current biases. A contact layer is grown directly over a majority carrier confining clad layer to reduce defects in the crystal face on the side of the clad layer, and thereby further reduce leakage current.

REFERENCES:
patent: 4425650 (1984-01-01), Mito et al.
patent: 4426700 (1984-01-01), Hirao et al.
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K. Y. Lau, et al., "11-GHz Direct Modulation Bandwidth GaAlAs Window Laser on Semi-Insulating Substrate Operating at Room Temperature", Applied Physics Letters, vol. 45, Aug. 1984, pp. 316-318.
Willie Ng, et al., "Low-Threshold 1.3-.mu.m GaInAsP/InP Buried Heterostructure Lasers by Liquid Phase Epitaxy and Metalorganic Chemical Vapor Deposition", Appl. Phys. Lett., 39, Aug. 1981, pp. 188-189.
C. B. Shu, et al., "15 GHz Direct Modulation Bandwidth of Vapor-Phase Regrown 1.3 .mu.m InGaAsP Buried-Heterostructure Lasers Under CW Operation at Room Temperature", Electronics Letters, vol. 21, No. 13, Jun. 1985, pp. 557-578.
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Y. Nakano et al., "Abnormality at the Interface of p-type InP Grown by LPE", Japan. Journal of Applied Physics, vol. 20, No. 8, Aug. 1981, pp. L619-L622.
M. Sugimoto et al., "InGaAsP/InP Current Confinement Mesa Substrate Buried Heterostructure Laser Diode Fabricated by One-Step Liquid Phase Epitaxy", IEEE J. of Lightwave Technology, vol. LT-2, No. 4, Aug. 1984, pp. 496-503.
W. Ng et al., "An Analytic Model for the Modulation Response of Buried Heterostructure Lasers", IEEE J. Quantum Electronics, vol. QE-20, No. 9, Sep. 1984, pp. 1008-1015.
R. A. Logan, et al., "Liquid Phase Epitaxial Growth on (111).sub.In Planes of InP", J. Applied Physics, vol. 54(9), Sep. 1983, pp. 5462-5463.

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