Testable variable-threshold non-volatile semiconductor memory

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365201, G01R 3128

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active

047792728

ABSTRACT:
A variable-threshold non-volatile memory in which a potential falling between a selection and a non-selection level is applied to the gates and the resultant drain current is measured to determine if one of the transistors has an abnormal threshold voltage.

REFERENCES:
patent: 4223394 (1980-09-01), Pathak
patent: 4301535 (1981-11-01), McKenny
patent: 4502140 (1985-02-01), Proebsting
patent: 4658380 (1987-04-01), Eby
patent: 4701695 (1987-10-01), Chan
ISSCC 83, Session XIII: "Nonvolative Memory" Van Buskirk, et al., 1983, Santa Clara, CA, pp. 162-163.

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