Semiconductor integrated circuit device with memory MISFETS and

Details Semiconductor integrated circuit device with memory MISFETS and Semiconductor integrated circuit device with memory MISFETS and

1981-01-07

1984-09-11

Munson, Gene M.

357 23, H01L 2702, H01L 2978

Patent

active

044713738

ABSTRACT:
A semiconductor integrated circuit device and a method of manufacturing the same, wherein an MIS type memory transistor of a two-layered gate electrode structure is formed on the surface of a semiconductor substrate, and an MIS type transistor for a low voltage having a comparatively thin gate oxide film and an MIS type transistor for a high voltage having a comparatively thick gate oxide film are formed around the memory transistor.

REFERENCES:
patent: 3502950 (1970-03-01), Nigh et al.
patent: 4003071 (1977-01-01), Takagi
patent: 4118642 (1978-10-01), Richardson
patent: 4300212 (1981-11-01), Simko

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